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Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Yonezawa, Yoshiyuki ; Mizushima, Tomonori ; Takenaka, Kensuke ; Fujisawa, Hiroyuki ; Kato, Tomohisa ; Harada, Shinsuke ; Tanaka, Yasunori ; Okamoto, Mitsuo ; Sometani, Mitsuru ; Okamoto, Dai ; Kumagai, Naoki ; Matsunaga, Shinichiro ; Deguchi, Tadayoshi ; Arai, Manabu ; Hatakeyama, Tetsuo ; Makifuchi, Youichi ; Araoka, Tsuyoshi ; Oose, Naoyuki ; Tsutsumi, Takashi ; Yoshikawa, Mitsuru ; Tatera, Katsumi ; Harashima, Masayuki ; Sano, Yukio ; Morisaki, Eisuke ; Takei, Manabu ; Miyajima, Masaaki ; Kimura, Hiroshi ; Otsuki, Akihiro ; Fukuda, Kenji ; Okumura, Hajime ; Kimoto, Tsunenobu

2013 IEEE International Electron Devices Meeting, December 2013, pp.6.6.1-6.6.4

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